Enhancing photoresponse by synergy of electric double layer gate and illumination in single CuTCNQ NW field effect transistors

Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors

We study the bias-temperature instability (BTI) on the back gate of double-gated graphene field-effect transistors (GFETs). The dependence of the resulting degradation on the stress time and oxide field is analyzed. Finally, the results are compared to the ones obtained on the high-k top gate of the same device.

Bias-temperature instability on the back gate of single-layer double-gated graphene field-effect transistors

We study the positive and negative bias-temperature instabilities (PBTI and NBTI) on the back gate of single-layer double-gated graphene fieldeffect transistors (GFETs). By analyzing the resulting degradation at different stress times and oxide fields we show that there is a significant asymmetry between PBTI and NBTI with respect to their dependences on these parameters. Finally, we compare th...

Photoresponse of Carbon Nanotube Field-Effect Transistors

Reliability of Single-Layer MoS2 Field-Effect Transistors with SiO2 and hBN Gate Insulators

We study the hysteresis and bias-temperature instabilities in single-layer MoS2 FETs with SiO2 and hBN gate insulators and attempt to capture the correlation between these phenomena. In agreement with previous literature reports, our results show that the use of hBN as a gate insulator reduces the hysteresis. Furthermore, we show that the impact of the biastemperature instabilities is weaker fo...

Ferroelectric polarization induces electric double layer bistability in electrolyte-gated field-effect transistors.

The dense surface charges expressed by a ferroelectric polymeric thin film induce ion displacement within a polyelectrolyte layer and vice versa. This is because the density of dipoles along the surface of the ferroelectric thin film and its polarization switching time matches that of the (Helmholtz) electric double layers formed at the ferroelectric/polyelectrolyte and polyelectrolyte/semicond...